We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Effects of ZnO composition on structure, optical and electrical properties of cosputtering InO-GaO-ZnO films.
- Authors
Lee, Yih-Shing; Wang, Chih-Wei; Lin, Yuan-Zhe; Jaing, Cheng-Chung
- Abstract
This study investigated the impacts of structure, optical and electrical properties of indium-gallium-zinc oxide (IGZO) film with varied ZnO deposition powers on glass substrates by using cosputtering system with two radio-frequency (RF) (ZnO and GaO) and one direct-current (DC) (InO) magnetron. The average transmittance decreased obviously from 86.37 to 81.44 % and the optical energy gap decreased from 3.56 to 3.29 eV when ZnO deposition power increases. Results are ascribed to facts that the content of Zn in IGZO films was increased and the fitting extinction coefficient near the wavelength in the range of 370-450 nm obviously increased with increase of ZnO deposition power; the fitting refractive index of IGZO films was noticeably increased and surface morphology displayed a dense structure. The crystallinities of IGZO films reveal from an amorphous structure with a content of Zn less than 50 at.% to a polycrystalline phase of IGZO film with a content of Zn around 70.5 at.%. The residual stress of the indium gallium oxide (IGO) films with undoped ZnO content significantly changed from a tensile stress to a compressive stress with an increased annealing temperature. When the ZnO composition incorporated into the IGO film, variations of the residual stress in the films gradually become smaller. The optimum process condition of cosputtering IGZO films with a ZnO deposition power at 100 W and an annealing temperature at 300 °C showed the largest film mobility, smallest surface roughness, and a lower residual stress.
- Subjects
ZINC oxide; ELECTRIC properties of solids; INDIUM; GALLIUM; OPTICAL properties; METALS; THIN films
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 11, p11470
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-5274-y