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- Title
Strain relaxation of InAs epilayer on GaAs under In-rich conditions.
- Authors
Cai, L. C.; Chen, H.; Bao, C. L.; Huang, Q.; Zhou, J. M.
- Abstract
Focuses on the strain relaxation of indium-arsenic (InAs) epilayer on gallium-arsenic indium-rich conditions. Detection of the relaxation of the strain within a 7 nm thick InAs layer under In-rich condition with low threading dislocations; Assessment of the growth process by in situ reflection high-energy electron diffraction; Maintenance of a two-dimensional growth mode throughout the entire growth process of InAs.
- Subjects
STRAINS &; stresses (Mechanics); INDIUM; ARSENIC; GALLIUM
- Publication
Journal of Materials Science Letters, 2003, Vol 22, Issue 8, p599
- ISSN
0261-8028
- Publication type
Article
- DOI
10.1023/A:1023350529729