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- Title
Y-Junction Single-Wall Carbon Nanotube Electronics.
- Authors
Wonbong Choi; Do-hyun Kim; Young Chul Choi; Huang, Jun
- Abstract
This article presents the synthesis of a Y-junction single-wall carbon nanotube (SWNT) and its electrical characterization. The formation of Y-junction branches is found to be dependent on the catalyst composition, which can be correlated to the Gibbs free energy of metal carbide formation. Radial breathing mode peaks in Raman spectra show that the sample has both metallic and semiconducting nanotubes, and their portion is varied with type of catalyst and growth temperature. The localized gating effect exhibited by the Y-SWNT suggests the resemblance of its electrical characteristics with ambipolar field effect transistor. The temperature dependence of the I-V characteristics reveals that the conduction mechanism in the Y-SWNT is governed by the thermionic emission at temperatures above 100 K and by tunneling at T < 100 K.
- Subjects
CARBON nanotubes; CATALYSTS; GIBBS' free energy; RAMAN effect; FIELD-effect transistors; THERMIONIC emission
- Publication
JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2007, Vol 59, Issue 3, p44
- ISSN
1047-4838
- Publication type
Article
- DOI
10.1007/s11837-007-0038-z