We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Intersubband Resonance Polarons in Al/δ-GaAs Tunneling Junctions.
- Authors
Kotel’nikov, I. N.; Kokin, V. A.; Fedorov, Yu. V.; Hook, A. V.; Talbaev, D. T.
- Abstract
Tunneling spectra of the Al/δ-GaAs junctions fabricated by molecular-beam epitaxy in the regime of “intimate” contact of Al with GaAs (100) were studied at 1.6 K in a magnetic field B parallel to the two-dimensional electron-gas layer. The concentration of 2D electrons in the δ-layer grown at a distance of 20 nm from the Al/GaAs interface was 1.1×10[sup 12]cm[sup –2] and corresponded to a partial filling of only the lowest subband E[sub 0]. The tunneling spectra exhibited many-particle features, viz., a zero-bias anomaly, lines of longitudinal optical (LO) phonons, and characteristic “dips” corresponding to the energies E[sub i] of the 2D subbands. In the B fields below the critical value B[sub c ]≅11 T, the levels of 2D subbands underwent the usual diamagnetic shifts. At B≥B[sub c], the E[sub 1](B) term pinning and the anticrossing of the E[sub 1](B) and E[sub 0](B) + 2hω[sub LO] terms were observed, where hω[sub LO] is the LO-phonon energy in GaAs. The observed effects are interpreted as manifestations of resonance intersubband polarons arising in the δ-layer upon reaching the E[sub 1](B[sub c]) – E[sub 0](B[sub c]) = 2hω[sub LO] resonance. © 2000 MAIK “Nauka / Interperiodica”.
- Subjects
GALLIUM arsenide; POLARONS; RESONANCE
- Publication
JETP Letters, 2000, Vol 71, Issue 9, p387
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.568361