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- Title
Intersubband Transition in GaN/InGaN Multiple Quantum Wells.
- Authors
Chen, G.; Wang, X. Q.; Rong, X.; Wang, P.; Xu, F. J.; Tang, N.; Qin, Z. X.; Chen, Y. H.; Shen, B.
- Abstract
Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3-5 μm atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8 nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells.
- Subjects
QUANTUM wells; ENERGY-band theory of solids; POTENTIAL theory (Physics); QUANTUM dots; CONDENSED matter physics
- Publication
Scientific Reports, 2015, p11485
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep11485