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- Title
High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions.
- Authors
SADOWI, B.; AMILUSIK, M.; STASZCZAK, G.; BOCKOWSKI, M.; GRZEGORY, I.; POROWSKI, S.; KONCZEWICZ, L.; TSYBULSKYI, V.; PANASYUK, M.; RUDYK, V.; KARBOVNYK, I.; KAPUSTIANYK, V.; LITWIN-STASZEWSKA, E.; PIOTRZKOWSKI, R.
- Abstract
Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [...], and [...]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
- Subjects
CRYSTALLOGRAPHY; SINGLE crystals; THERMAL stability; OPTICAL properties; PHOTOLUMINESCENCE
- Publication
Acta Physica Polonica: A, 2016, Vol 129, Issue 1A, pA-126
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.129.A-126