We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
CHARACTERIZATION OF ZnO FILMS BY ION BEAM ANALYSIS.
- Authors
KENNEDY, JOHN; MARKWITZ, ANDREAS; LI, ZHENGWEI; GAO, WEI
- Abstract
Ion Beam Analysis (IBA) techniques such as Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) were used to determine the composition, uniformity, impurity and elemental depth profiles of Zn, O and H in ZnO films deposited on silicon, quartz, glass and glassy carbon using radio frequency (RF) magnetron sputtering. For the films deposited under the same condition, it was observed that the variation of Zn/O ratios is independent of substrate material and depends on the film thickness. ERDA revealed that the hydrogen impurities were incorporated into the films. Higher hydrogen concentrations were found for the films deposited on glass and quartz compared to Si. The composition and thickness variation in relationship with three different substrates were explored with XRD, SEM, AFM, PL and Hall probe measurements. It was found that ZnO films (250-300 nm) deposited on Si have, the optical and electrical properties which make them suitable candidate for following p-type doping studies using ion implantation and annealing techniques.
- Subjects
ION bombardment; ZINC oxide thin films; RADIO frequency; BACKSCATTERING; HALL effect; MAGNETRONS
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2006, Vol 20, Issue 25-27, p4655
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979206041847