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- Title
Ultra-fast MHz range driving circuit for SiC MOSFET using frequency multiplier with eGaN FET.
- Authors
Taekyun Kim; Minsoo Jang; Agelidis, Vassilios G.
- Abstract
This study proposes a MHz gate driving solution for silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET), which enables multiplication of the switching frequency by using the n-type eGaN FET technology and by connecting half-bridges in parallel. Phase-shifted pulse width modulation is used to multiple the output frequency by a factor of n, depending on the number of half-bridges connected in parallel. The proposed gate driver is analysed and experimentally validated for the operational performance of a 600 W non-isolated dc-dc boost converter operating at 2 MHz. In addition, the performance of a 5 MHz two-parallel-connected gate driver is presented.
- Subjects
SILICON carbide; METAL oxide semiconductor field-effect transistors; FREQUENCY multipliers; GALLIUM nitride; FINITE element method; CASCADE converters
- Publication
IET Power Electronics (Wiley-Blackwell), 2016, Vol 9, Issue 10, p2085
- ISSN
1755-4535
- Publication type
Article
- DOI
10.1049/iet-pel.2015.0491