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- Title
Air-stable n-type colloidal quantum dot solids.
- Authors
Ning, Zhijun; Voznyy, Oleksandr; Pan, Jun; Hoogland, Sjoerd; Adinolfi, Valerio; Xu, Jixian; Li, Min; Kirmani, Ahmad R.; Sun, Jon-Paul; Minor, James; Kemp, Kyle W.; Dong, Haopeng; Rollny, Lisa; Labelle, André; Carey, Graham; Sutherland, Brandon; Hill, Ian; Amassian, Aram; Liu, Huan; Tang, Jiang
- Abstract
Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials.
- Subjects
SEMICONDUCTOR nanocrystals; OPTICAL materials; ENERGY conversion; P-type semiconductors; N-type semiconductors; ELECTRONIC equipment
- Publication
Nature Materials, 2014, Vol 13, Issue 8, p822
- ISSN
1476-1122
- Publication type
Article
- DOI
10.1038/nmat4007