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- Title
Photoluminescence properties of Al[sub x]Ga[sub 1-x]As epitaxial layers grown under conditions of ultrafast flux cooling.
- Authors
Abramov, A. V.; Deryagin, A. G.; Deryagin, N. G.; Kokhanovskiı, S. I.; Kuchinskiı, V. I.; Rafailov, É. U.; Sokolovskiı, G. S.; Tret’yakov, D. N.
- Abstract
Results are presented of studies of the photoluminescence properties of epitaxial layers of Al[sub x]Ga[sub 1-x]As solid solutions grown by liquid-phase epitaxy with nonequilibrium crystallization achieved by ultrafast rates of cooling of the flux (V∼10²-10³ °C/s). The photoluminescence characteristics obtained indicate that the epitaxial layers are of high quality. It is also observed that when samples with x[sub buff] = 0.5-0.55 are exposed to laser radiation of power density ∼1 kW/cm² at a temperature of 77 K, the spectral composition of the radiation undergoes irreversible changes caused by the formation of an arsenic vacancy (V[sub As])-donor impurity complex.
- Subjects
SOLID solutions; ALUMINUM compounds; PHOTOLUMINESCENCE
- Publication
Technical Physics Letters, 1997, Vol 23, Issue 3, p172
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1261867