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- Title
Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors.
- Authors
Laudari, Amrit; Pickett, Alec; Shahedipour‐Sandvik, Fatemeh; Hogan, Kasey; Anthony, John E.; He, Xiaoqing; Guha, Suchismita
- Abstract
Polymer ferroelectrics are playing an increasingly active role in flexible memory application and wearable electronics. The relaxor ferroelectric dielectric, poly(vinylidene fluoride trifluorethylene (PVDF‐TrFE), although vastly used in organic field‐effect transistors (FETs), has issues with gate leakage current especially when the film thickness is below 500 nm. This work demonstrates a novel method of selective poling the dielectric layer. By using solution‐processed 6,13‐bis(triisopropylsilylethynyl)pentacene (TIPS‐pentacene) as the organic semiconductor, it is shown that textured poling of the PVDF‐TrFE layer dramatically improves FET properties compared to unpoled or uniformly poled ferroelectric films. The texturing is achieved by first vertically poling the PVDF‐TrFE film and then laterally poling the dielectric layer close to the gate electrode. TIPS‐pentacene FETs show on/off ratios of 105 and hole mobilities of 1 cm2 Vs−1 under ambient conditions with operating voltages well below −5 V. The electric field distribution in the dielectric layer is simulated by using finite difference time domain methods. The on/off ratios and the carrier mobilities improve by an order of magnitude for the textured poled TIPS‐pentacene field‐effect transistor (FET) compared to the uniformly (vertically) poled FET. Texturing the dielectric layer opens the prospect of achieving low‐operating, high‐performance, low‐cost organic FETs.
- Subjects
FERROELECTRIC devices; DIELECTRIC devices; ORGANIC field-effect transistors; POLYVINYLIDENE fluoride; THICKNESS measurement
- Publication
Advanced Materials Interfaces, 2019, Vol 6, Issue 4, pN.PAG
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.201801787