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- Title
Low-Temperature Processing of Silicon Oxycarbide-Bonded Silicon Carbide.
- Authors
Jung-Hye Eom; Young-Wook Kim
- Abstract
Silicon oxycarbide (SiOC)-bonded SiC ceramics were fabricated from SiC–polysiloxane mixtures at temperatures as low as 700°–900°C using a simple pressing and heat-treatment process. During heat treatment, the polysiloxane transformed to an amorphous SiOC phase, which acted as the bonding material between SiC particles. The SiOC-bonded SiC ceramics obtained had 18%–24% residual porosity and a flexural strength of 32–82 MPa depending on the starting SiC particle size and heat-treatment temperature.
- Subjects
SILICON carbide; CERAMICS; INDUSTRIAL chemistry; SILOXANES; METALLURGY; CONSTRUCTION materials; CHEMISTRY
- Publication
Journal of the American Ceramic Society, 2010, Vol 93, Issue 9, p2463
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/j.1551-2916.2010.03812.x