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- Title
Approach to suppress ambipolarity and improve RF and linearity performances on ED-Tunnel FET.
- Authors
Chandan, Bandi Venkata; Dasari, Sushmitha; Yadav, Shivendra; Sharma, Dheeraj
- Abstract
This work reports a dual metal bipolar gate-based electrically doped tunnel field-effect transistor (DMBG-ED-TFET) which overcomes the ambipolarity issue and gives improved radio frequency (RF) and linearity metrics. The formations of n+, p+ drain and source regions in this device is performed by applying polarity biases at polarity gate (PG)-1 and PG-2 with 1.2 and -1.2 V. In DMBG-ED-TFET, the gate is alienated into three subdivisions and each subdivision named as tunnel gate (M1), BG (M2) and auxiliary gate (M3) with their respective work functions as ϕM1, ϕM2 and ϕM3, respectively. Finally, some existent applications were applied on a proposed device with different possible combinations (work function). Those different possible combinations of work function, the proposed device (DMBGED- TFET) gives superior results with ϕM1 = ϕM3 < ϕM2, where ϕM1 is near to source region because to increase the Ion current and ϕM3 is located near the drain region to overwhelm the ambipolarity. Additionally, the application of work function engineering on the proposed device results in improving the DC characteristics along with analogue/RF and linearity figure of merits (VIP3, IIP3 and IMD3) also discussed.
- Subjects
TUNNEL field-effect transistors; METAL oxide semiconductor field-effect transistors; FIELD-effect transistors; POLARITY (Chemistry); RADIO frequency
- Publication
Micro & Nano Letters (Wiley-Blackwell), 2018, Vol 13, Issue 5, p684
- ISSN
1750-0443
- Publication type
Article
- DOI
10.1049/mnl.2017.0814