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- Title
Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta<sub>2</sub>O<sub>5</sub>/Ta and TiN/HfO<sub>2</sub>/Ta<sub>2</sub>O<sub>5</sub>/Ta Stacks.
- Authors
Kuzmichev, Dmitry S.; Chernikova, Anna G.; Kozodaev, Maxim G.; Markeev, Andrey M.
- Abstract
Herein, Ta2O5/Ta interface‐based TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta resistance switched (RS) stacks are investigated. The stacks reveal area‐dependent RS behavior indicating nonfilamentary (homogeneous) current transport. The nonfilamentary nature of the stacks provides high reproducibility of current–voltage hysteresis loops and the absence of electroforming. It is demonstrated that the nature of the current hysteresis in single Ta2O5‐based stacks obeys space‐charge‐limited conduction, and the space charge responsible for this behavior is formed by filled/emptied traps at the Ta/Ta2O5 interface. Due to the high potential barrier at the TiN/HfO2 interface, as measured using X‐ray photoelectron spectroscopy, sufficiently thick HfO2 (≈4 nm) blocks the trapping/detrapping process, thereby reducing the current hysteresis. The evaluated current mechanism results in a high rectification ratio of the TiN/Ta2O5/Ta device of ≈1.6 × 104. However, relatively short retention is inherent to the observed switching mechanism.
- Subjects
RECTIFICATION (Electricity); SPACE charge; X-ray photoelectron spectroscopy; HYSTERESIS loop; POTENTIAL barrier; HYSTERESIS
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2020, Vol 217, Issue 18, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201900952