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- Title
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges.
- Authors
Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.; Jena, D.; Johnson, N. M.; Jones, K. A.; Kaplar, R. J.; Rajan, S.; Van De Walle, C. G.; Bellotti, E.; Chua, C. L.; Collazo, R.; Coltrin, M. E.; Cooper, J. A.; Evans, K. R.; Graham, S.; Grotjohn, T. A.; Heller, E. R.; Higashiwaki, M.; Islam, M. S.
- Abstract
Abstract: Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.
- Subjects
SEMICONDUCTORS; BAND gaps; ELECTRIC properties of gallium nitride; OPTOELECTRONICS; ELECTRIC properties of aluminum gallium nitride
- Publication
Advanced Electronic Materials, 2018, Vol 4, Issue 1, p1
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.201600501