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- Title
Electronic properties of core-shell nanowire resonant tunneling diodes.
- Authors
Zervos, Matthew
- Abstract
The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells <10 nm, and 5 nm InP barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping.
- Subjects
STRUCTURAL shells; ELECTRIC properties of nanowires; QUANTUM tunneling; DIODES -- Design &; construction; INDIUM arsenide
- Publication
Nanoscale Research Letters, 2014, Vol 9, Issue 1, p1
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1186/1556-276X-9-509