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- Title
Effect of features of the technology of polycrystalline CdTe growth on the conductivity and deep level spectrum after annealing.
- Authors
Bobrova, E.; Klevkov, Yu.; Chernook, S.; Senturina, N.
- Abstract
The conductivity, morphology, and deep levels in polycrystalline CdTe are studied. Undoped p-CdTe is grown from the vapor phase by low-temperature methods of direct Cd and Te chemical reaction and CdTe vacuum sublimation at P. Chlorine-doped CdTe is also grown. The resistivity of the grown samples is ∼105-109 Ω cm. After annealing in liquid cadmium or in cadmium vapor at ∼500°C, the conductivity type changes, the free-carrier concentration in the undoped and doped samples increases to 4 × 10 and ∼2 × 10 cm, respectively. For all samples, a defect ground level of ∼0.84 eV and continuous background are observed in DLTS spectra after annealing. A correlation between the primary-defect and free-carrier concentrations in undoped and doped CdTe is observed. Chlorine is a main residual impurity in the undoped samples. It is assumed that the defect is a complex including chlorine and observed structural defects in CdTe.
- Subjects
POLYCRYSTALS; CADMIUM alloys; ANNEALING of metals; VACUUM technology; POINT defects; DOPING agents (Chemistry)
- Publication
Semiconductors, 2014, Vol 48, Issue 3, p406
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S106378261403004X