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- Title
Laterally Inhomogeneous Barrier Analysis Using Capacitance-Voltage Characteristics of Identically Fabricated Schottky Diodes.
- Authors
Çavdar, Şükrü; Tuğluoğlu, Nihat; Akgül, Kübra; Koralay, Haluk
- Abstract
Au Schottky contacts (50 dots) on n-Si (100) were fabricated by thermal evaporation under the same conditions. The mean of the electrical parameters of the diodes were investigated by means of capacitance-voltage ( C- V) measurements at 1 MHz. Even if the diodes were all equally fabricated, there was a diode-to-diode change. The values of barrier height (Φ) were determined from the C- V characteristics, which ranged from 0.812 eV to 0.837 eV. The Gaussian fit of the barrier height distributions gave a mean of barrier height value of 0.822 eV and a standard value of 0.005 eV. Furthermore, the mean values of other parameters such as the carrier donor concentration ( N), the diffusion potential at zero bias ( V), the Fermi level ( E), the image force lowering (ΔΦ) and the space charge layer width ( W) were investigated and determined to be 1.311 × 10 cm, 0.575 V, 0.257 eV, 1.363 × 10 eV, and 7.573 × 10 cm, respectively.
- Subjects
ELECTRIC capacity; ELECTRIC potential; SCHOTTKY barrier diodes; DIFFUSION; SCHOTTKY barrier
- Publication
Journal of Electronic Materials, 2016, Vol 45, Issue 8, p3908
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-016-4546-x