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- Title
Method for increasing the carrier mobility in the channel of the 4 H-SiC MOSFET.
- Authors
Mikhaylov, A.; Afanasyev, A.; Ilyin, V.; Luchinin, V.; Reshanov, S.; Schöner, A.
- Abstract
A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4 H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of NO.
- Subjects
ELECTRIC properties; SILICON carbide; METAL oxide semiconductor field-effect transistors; FIELD-effect transistors -- Design &; construction; NITROGEN oxides; ELECTRIC insulators &; insulation
- Publication
Semiconductors, 2016, Vol 50, Issue 6, p824
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782616060178