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- Title
Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures.
- Authors
WOSIŃSKI, T.; FIGIELSKI, T.; MORAWSKI, A.; MAKOSA, A.; SZYMCZAK, R.; WRÓBEL, J.; SADOWSKI, J.
- Abstract
Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.
- Subjects
MAGNETORESISTANCE; FERROMAGNETIC materials; NANOSTRUCTURED materials; ELECTRON beams; NANOWIRES; MAGNETIC fields
- Publication
Materials Science (0137-1339), 2008, Vol 26, Issue 4, p1097
- ISSN
0137-1339
- Publication type
Article