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- Title
Sub-bandgap photo-response of Mo-hyperdoped black silicon MSM photodetectors.
- Authors
Yang, Yang; Ren, Zhe-Yi; Li, Chao; Zhao, Ji-Hong
- Abstract
The molybdenum-hyperdoped black silicon materials were fabricated by using femtosecond laser pulses. The energy level of molybdenum in bandgap of silicon was determined by temperature-dependent Hall effect measurements. By introducing intermediate band in the bandgap of silicon, molybdenum-hyperdoped black silicon materials showed thermally stable absorption to photons with energy below the bandgap of silicon (0.5–1.1 eV). We studied current–voltage characteristics of metal-black silicon-metal photodetectors prepared using molybdenum hyperdoped black silicon. The lateral structural photodetectors showed an observable photo-response to the infrared photon. The room-temperature responsivity of 25.1 mA/W at 0.95 eV was obtained.
- Subjects
PHOTODETECTORS; FEMTOSECOND pulses; HALL effect; SILICON; CURRENT-voltage characteristics; MOLYBDENUM; FEMTOSECOND lasers
- Publication
Optical & Quantum Electronics, 2023, Vol 55, Issue 3, p1
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-023-04556-8