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- Title
Titanium oxide vertical resistive random-access memory device.
- Authors
Fryauf, David M.; Norris, Kate J.; Junce Zhang; Shih-Yuan Wang; Kobayashi, Nobuhiko P.
- Abstract
Pt/TiO2/Pt vertical resistive random-access memory switching devices were fabricated in a vertical three-dimensional structure by combining conventional photolithography, electron-beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross-sectional area was ~0.02 μm², which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross-sectional scanning, transmission electron microscopy and current-voltage characteristics.
- Subjects
COMPUTER storage devices; TITANIUM oxides; NONVOLATILE random-access memory; PHOTOLITHOGRAPHY; ELECTRON beams; ATOMIC layer deposition
- Publication
Micro & Nano Letters (Wiley-Blackwell), 2015, Vol 10, Issue 7, p321
- ISSN
1750-0443
- Publication type
Article
- DOI
10.1049/mnl.2015.0021