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- Title
MOVPE of structures with aluminum nanocluster layers in a GaAs matrix.
- Authors
Vostokov, N. V.; Danil'tsev, V.; Drozdov, Yu. N.; Pryakhin, D. A.; Shashkin, V. I.; Shuleshova, I. Yu.
- Abstract
Metalorganic vapor phase epitaxy (MOVPE) was used to grow semiconductor structures comprising a GaAs single crystal matrix with incorporated layers of aluminum nanoclusters (Al-NCs). A new regime of GaAs overgrowth on Al-NC layers is proposed, which ensures planarization of the semiconductor layer surface at a thickness comparable with the height of Al-NCs.
- Subjects
GALLIUM arsenide semiconductors; EPITAXY; CRYSTAL growth; SEMICONDUCTORS; ALUMINUM; NANOSTRUCTURED materials
- Publication
Technical Physics Letters, 2007, Vol 33, Issue 5, p444
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785007050252