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- Title
Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.
- Authors
Zhilyaev, Yu. V.; Raevskii, S. D.; Grabko, D. Z.; Leu, D. S.; Kompan, M. E.; Yusupova, Sh. A.; Shcheglov, M. P.
- Abstract
Bulk GaN layers with a thickness of up to 1.5 mm and a lateral size of 50 mm were grown by hydride–chloride vapor-phase epitaxy (HVPE). The best samples show a half-width (FWHM) of the X-ray rocking curve of ωθ = 27′, a charge carrier density of ∼8 × 1019cm–3, and a mobility of ∼50 cm2 /(V s). The photoluminescence spectra of the obtained epitaxial GaN layers exhibit an edge emission band at 348 eV. The HVPE layers are characterized by a high mechanical strength: HV = 14 GPa. © 2005 Pleiades Publishing, Inc.
- Subjects
GALLIUM; HYDRIDES; EPITAXY; CRYSTAL growth; VAPOR-plating; SPECTRUM analysis; PHOTOLUMINESCENCE
- Publication
Technical Physics Letters, 2005, Vol 31, Issue 5, p367
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1931770