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- Title
A 21.4 dBm W-Band GaAs PHEMT MMIC Power Amplifier.
- Authors
Zhao Hua; Yao Hongfei; Jin Zhi; Liu Xinyu
- Abstract
This W-Band MMIC power amplifier (PA) has a small-signal gain (S21) of 11.2 dB, an input/output reflection coefficient (S11) of -9 dB and saturated output power of 21.4 dBm at 88 GHz. A low loss matching network with power combiner and microstrip coupled lines (MCL) is employed to increase the gain and output power of this three-stage design using WIN Semiconductor's 0.1 µm GaAs PHEMT process. Compared with metal-insulator-metal (MIM) capacitors, MCLs have greater stability and are less affected by fabrication tolerances. The chip size of the PA is only 2.86 mm ×1.76 mm2.
- Subjects
MONOLITHIC microwave integrated circuit power amplifiers; REFLECTANCE; MICROSTRIP couplers; METAL-insulator-metal devices; MIM capacitors
- Publication
Microwave Journal, 2017, Vol 60, p6
- ISSN
0192-6225
- Publication type
Article