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- Title
Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor.
- Authors
Gorbachev, Yu.E.
- Abstract
A plasma-chemical model of processes in a PECVD reactor is constructed that is an extension of the earlier model and takes into account the formation of oligomers SinHm ( n ≤ 5). The corresponding scheme of chemical reactions is developed, and simulation of film growth is carried out. It is found that Si2H5 and Si3H7 components strongly influence the film growth. It is of interest to obtain more reliable experimental data dramatizing these effects.
- Subjects
SILICON; AMORPHOUS substances; PLASMA-enhanced chemical vapor deposition; OLIGOMERS; CHEMICAL reactions
- Publication
Technical Physics, 2006, Vol 51, Issue 6, p733
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784206060089