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- Title
Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE.
- Authors
Lutsenko, Evgenii V.; Rzheutski, Mikalai V.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Tarasuk, Nikolai P.; Yablonskii, Gennadii P.; Alyamani, Ahmed; Petrov, Stanislav I.; Mamaev, Viktor V.; Alexeev, Alexey N.
- Abstract
A series of double heterojunction AlGaN/GaN/AlGaN high electron mobility transistor (HEMT) heterostructures are grown by ammonia MBE on sapphire substrates using AlN buffer layers with varying thicknesses and growth conditions. The grown heterostructures are investigated by atomic force microscopy as well as photoluminescence (PL), stimulated emission (SE), and photoreflectance (PR) measurements. It is shown that PL intensity cannot be used as a reliable criterion for quality control of HEMT heterostructures because of an influence of surface roughness. A new method of quality control of the active GaN layer in HEMTs is proposed based on determination of the SE threshold excitation level. An advantage of the method is that no reference sample is needed for comparison of different HEMT structures. Internal electric field strength values are determined from PR spectra and their correlation with 2DEG density is demonstrated.
- Subjects
ALUMINUM gallium nitride; MODULATION-doped field-effect transistors; PHOTOLUMINESCENCE; PHOTOREFLECTANCE; HETEROSTRUCTURES
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2018, Vol 215, Issue 9, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201700602