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- Title
Ferroelectric and dielectric properties of Li-doped ZnO thin films prepared by pulsed laser deposition.
- Authors
Wang, X.S.; Wu, Z.C.; Webb, J.F.; Liu, Z.G.
- Abstract
Zinc oxide is a very important piezoelectric material with lower preparation temperature, simpler structure and composition. By doping with some elements having smaller ionic radii, such as lithium, to substitute the zinc ions, it is expected that the center of the positive charge in a unit cell will not overlap with that of the negative charge in the same unit cell, leading to the appearance of the spontaneous polarization. Thin films of Li-doped ZnO with different compositions (Zn[SUB1-x]Li[SUBx]O[SUBy], x=0.075, 0.1, 0.125 and 0.15) have been prepared on heavily doped Si substrates by a pulsed laser deposition technique. In the films with x = 0.1 and x = 0.125, ferroelectric P-E hysteresis loops were successfully observed. The remanent polarization and the coercive field of Zn[SUB0.9]Li[SUB0.1]O[SUBy] and Zn[SUB0.875]Li[SUB0.125]O[SUBy] were 0.193 μC/cm[SUP2], 4.8 kV/cm and 0.255 μC/cm[SUP2], 4.89 kV/cm, respectively. An anomalous point in the dielectric spectrum of the Li-doped ZnO ceramics is observed, showing that the ferroelectric phase transition occurs around 67 °C under 7.5 at. % Li-doped ZnO and 74 °C under 10 at. %. If the remanent polarization of this material can be further increased, it may be used as a ferroelectric material.
- Subjects
ZINC oxide; PIEZOELECTRIC materials; LITHIUM; THIN films; FERROELECTRIC crystals
- Publication
Applied Physics A: Materials Science & Processing, 2003, Vol 77, Issue 3/4, p561
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-002-1497-2