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- Title
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).
- Authors
Karachinsky, L. Ya.; Novikov, I. I.; Shernyakov, Yu. M.; Gordeev, N. Yu.; Payusov, A. S.; Maximov, M. V.; Mikhrin, S. S.; Lifshits, M. B.; Shchukin, V. A.; Kop'ev, P. S.; Ledentsov, N. N.; Bimberg, D.
- Abstract
Lasers that emit in the 1.3 μm wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilayer interference reflector, which brings about the fact that a large factor of optical confinement and low leakage losses are obtained only for the light propagating at some angle and, consequently, having a strictly definite wavelength. It is shown that, due to the use of such a waveguide structure, the temperature shift of the lasing wavelength is 0.2 nm/K, which is 2.5 times smaller than this shift in the lasers with quantum dots and with a conventional structure of the waveguide. The lasers with the stripe-contact width W = 10 μm exhibited the spatially single-mode emission, which verifies the advantages of the suggested nonconventional structure of the optical waveguide.
- Subjects
QUANTUM dots; SEMICONDUCTOR lasers; WAVELENGTHS; TEMPERATURE measurements; OPTOELECTRONIC devices; CRYSTAL growth
- Publication
Semiconductors, 2009, Vol 43, Issue 5, p680
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782609050261