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- Title
Design of a Frequency Multiplier Based on Laterally Coupled Quantum Dots for Optoelectronic Device Applications in the Terahertz Domain: Impact of Inhomogeneous Indium Distribution, Strain, Pressure, Temperature, and Electric Field.
- Authors
Choubani, M.; Benzerroug, N.
- Abstract
We have investigated the effects of size, hydrostatic pressure, temperature, electric field, and inhomogeneous indium distribution on sub-band electronic properties and the second harmonic generation (SHG) coefficient. In our model, a system of two lens-shaped InxGa1−xAs quantum dots (QDs) laterally coupled to their wetting layer (WL) was investigated. To compute energy levels and their corresponding envelope functions, the finite difference method was used. Then, the SHG coefficient was calculated using the density matrix approach. The results showed that the indium segregation inside the WL and In–Ga interdiffusion inside QDs must be considered to match photoluminescence (PL) data. It was also found that the structure under study can be used to generate a stronger SHG coefficient in the terahertz domain. In addition, the SHG spectra can be adjusted with the inclusion of the hydrostatic pressure (P), temperature (T), spacer width (LH) between neighboring QDs, and electric field (F) effects. Therefore, a redshift (to lower energies) or blueshift (to higher energies) of the SHG spectra can occur in the terahertz region, and the structure can be used as a frequency doubler.
- Subjects
QUANTUM dots; QUANTUM dot devices; ELECTRIC fields; INDIUM; SECOND harmonic generation; HYDROSTATIC pressure
- Publication
Journal of Electronic Materials, 2024, Vol 53, Issue 4, p1884
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-024-10950-z