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- Title
High-Speed and Low-Energy Nitride Memristors.
- Authors
Choi, Byung Joon; Torrezan, Antonio C.; Strachan, John Paul; Kotula, P. G.; Lohn, A. J.; Marinella, Matthew J.; Li, Zhiyong; Williams, R. Stanley; Yang, J. Joshua
- Abstract
High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.
- Subjects
MEMRISTORS; WAVEGUIDES; ELECTRIC properties of aluminum; ALUMINUM nitride; ELECTRIC conductivity
- Publication
Advanced Functional Materials, 2016, Vol 26, Issue 29, p5290
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.201600680