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- Title
Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method.
- Authors
Yugova, T. G.; Knyazev, S. N.; Pavlova, O. S.
- Abstract
Facets are formed at the periphery of the conical part of GaAs single crystals grown by the Czochralski method when the melt is supercooled at the crystal periphery. The stronger the supercooling, the longer the facets are. A difference is observed in the facet shape between Sn- and Te-doped crystals. It is shown that the facet region is faceted by the А(111) plane.
- Subjects
AUDITING standards; CRYSTALS; SINGLE crystals; GALLIUM arsenide; TIN; SUPERCOOLING; GALLIUM antimonide
- Publication
Crystallography Reports, 2022, Vol 67, Issue 3, p323
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774522030245