We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures.
- Authors
Novikov, I. I.; Nyapshaev, I. A.; Gladyshev, A. G.; Andryushkin, V. V.; Babichev, A. V.; Karachinsky, L. Yu.; Shernyakov, Yu. M.; Denisov, D. V.; Kryzhanovskaya, N. V.; Zhukov, A. E.; Egorov, A. Yu.
- Abstract
The influence of InGaAlAs waveguide composition on the photoluminescence and electroluminescence of 1550 nm spectral range heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with InP leads to falling of integrated photoluminescence intensity, however, laser diodes with In0.53Ga0.31Al0.16As waveguide layers demonstrate a higher differential gain compared to laser diodes with In0.53Ga0.27Al0.20As waveguide.
- Subjects
SEMICONDUCTOR lasers; HETEROSTRUCTURES; INDIUM gallium arsenide; LASERS; LATTICE constants; ELECTROLUMINESCENCE; WAVEGUIDES; PHOTOLUMINESCENCE measurement; QUANTUM wells
- Publication
Semiconductors, 2023, Vol 57, Issue 11, p492
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782623080134