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MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 451, doi. 10.1134/S1063782624050130
By:
- Samartsev, I. V.;
- Zvonkov, B. N.;
- Baidus, N. V.;
- Chigineva, A. B.;
- Zhidyaev, K. S.;
- Dikareva, N. V.;
- Zdoroveyshchev, A. V.;
- Rykov, A. V.;
- Plankina, S. M.;
- Nezhdanov, A. V.;
- Ershov, A. V.
Publication type:
Article
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 122, doi. 10.1134/S1063782622010171
By:
- Sushkov, A. A.;
- Pavlov, D. A.;
- Andrianov, A. I.;
- Shengurov, V. G.;
- Denisov, S. A.;
- Chalkov, V. Yu.;
- Kriukov, R. N.;
- Baidus, N. V.;
- Yurasov, D. V.;
- Rykov, A. V.
Publication type:
Article
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1709, doi. 10.1134/S1063782619160085
By:
- Dikareva, N. V.;
- Zvonkov, B. N.;
- Samartsev, I. V.;
- Nekorkin, S. M.;
- Baidus, N. V.;
- Dubinov, A. A.
Publication type:
Article
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al<sub>2</sub>O<sub>3</sub> Substrate.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1242, doi. 10.1134/S1063782619090227
By:
- Sushkov, A. A.;
- Pavlov, D. A.;
- Shengurov, V. G.;
- Denisov, S. A.;
- Chalkov, V. Yu.;
- Baidus, N. V.;
- Rykov, A. V.;
- Kryukov, R. N.
Publication type:
Article
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1138, doi. 10.1134/S1063782619080037
By:
- Aleshkin, V. Ya.;
- Baidus, N. V.;
- Dubinov, A. A.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Kruglov, A. V.;
- Reunov, D. G.
Publication type:
Article
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 326, doi. 10.1134/S1063782619030047
By:
- Baidus, N. V.;
- Kukushkin, V. A.;
- Nekorkin, S. M.;
- Kruglov, A. V.;
- Reunov, D. G.
Publication type:
Article
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
By:
- Baidus, N. V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Krasilnik, Z. F.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Novikov, A. V.;
- Rykov, A. V.;
- Reunov, D. G.;
- Shaleev, M. V.;
- Yunin, P. A.;
- Yurasov, D. V.
Publication type:
Article
Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670
By:
- Karpovich, I. A.;
- Levichev, B. N.;
- Levichev, S. B.;
- Baidus, N. V.;
- Tikhov, S. V.;
- Filatov, D. O.;
- Gorshkov, A. P.;
- Ermakov, S. Yu.
Publication type:
Article
Effect of Surface Modification on the Properties of Hydrogen-Sensitive GaAs-Based Schottky Diodes.
Published in:
Technical Physics, 2003, v. 48, n. 5, p. 592, doi. 10.1134/1.1576473
By:
- Tikhov, S. V.;
- Shobolov, E. L.;
- Levichev, S. B.;
- Baidus, N. V.
Publication type:
Article
Electron mobility in the GaAs/InGaAs/GaAs quantum wells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 152
By:
- Vainberg, V. V.;
- Pylypchuk, A. S.;
- Baidus, N. V.;
- Zvonkov, B. N.
Publication type:
Article
Circularly polarized electroluminescence of quantum-size InGaAs/GaAs heterostructures with ferromagnetic metal-GaAs Schottky contacts.
Published in:
Technical Physics Letters, 2006, v. 32, n. 12, p. 1064, doi. 10.1134/S1063785006120200
By:
- Dorokhin, M. V.;
- Zaitsev, S. V.;
- Kulakovskii, V. D.;
- Baidus', N. V.;
- Danilov, Yu. A.;
- Demina, P. B.;
- Zvonkov, B. N.;
- Uskova, E. A.
Publication type:
Article
Dissipative Tunneling of Electrons in Vertically Coupled Double Asymmetric InAs/GaAs(001) Quantum Dots.
Published in:
Technical Physics, 2022, v. 67, n. 2, p. 115, doi. 10.1134/S1063784222010145
By:
- Semenov, M. B.;
- Krevchik, V. D.;
- Filatov, D. O.;
- Shorokhov, A. V.;
- Shkurinov, A. P.;
- Ozheredov, I. A.;
- Krevchik, P. V.;
- Wang, Y. H.;
- Li, T. R.;
- Malik, A. K.;
- Marychev, M. O.;
- Baidus, N. V.;
- Semenov, I. M.
Publication type:
Article
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2003, v. 37, n. 2, p. 194, doi. 10.1134/1.1548664
By:
- Drozdov, Yu. N.;
- Baıdus’, N. V.;
- Zvonkov, B. N.;
- Drozdov, M. N.;
- Khrykin, O. I.;
- Shashkin, V. I.
Publication type:
Article
Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition.
Published in:
Semiconductors, 2001, v. 35, n. 1, p. 93, doi. 10.1134/1.1340297
By:
- Zvonkov, B. N.;
- Karpovich, I. A.;
- Baıdus’, N. V.;
- Filatov, D. O.;
- Morozov, S. V.
Publication type:
Article
Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al)GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si(100) Substrates.
Published in:
Technical Physics Letters, 2021, v. 47, n. 5, p. 413, doi. 10.1134/S1063785021040283
By:
- Rykov, A. V.;
- Kryukov, R. N.;
- Samartsev, I. V.;
- Yunin, P. A.;
- Shengurov, V. G.;
- Zaitsev, A. V.;
- Baidus', N. V.
Publication type:
Article
Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
Published in:
Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
By:
- Aleshkin, V. Ya.;
- Baidus, N. V.;
- Vikhrova, O. V.;
- Dubinov, A. A.;
- Zvonkov, B. N.;
- Krasilnik, Z. F.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Novikov, A. V.;
- Rykov, A. V.;
- Samartsev, I. V.;
- Yurasov, D. V.
Publication type:
Article
Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes.
Published in:
Physica Status Solidi (B), 2009, v. 246, n. 5, p. 1132, doi. 10.1002/pssb.200844353
By:
- Zaitsev, S. V.;
- Dorokhin, M. V.;
- Demina, P. B.;
- Baidus, N. V.;
- Uskova, E. A.;
- Zvonkov, B. N.
Publication type:
Article

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