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- Title
A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface.
- Authors
Logeeswaran, V. J.; Sarkar, A.; Islam, M. S.; Kobayashi, N. P.; Straznicky, J.; Xuema Li; Wei Wu; Sagi Mathai; Tan, M. R. T.; Shih-Yuan Wang; Williams, R. S.
- Abstract
We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared on silicon substrates. A 14-ps full width at half maximum de-embedded impulse response is measured, which is the fastest reported response for a photodetector fabricated using nanowires. The high-speed electrical signal measurements from the photoconductor are performed by an integrated coplanar waveguide transmission line. The demonstrated ability to grow intersecting InP nanowires on hydrogenated microcrystalline Si surfaces will facilitate the construction of ultra-fast photodetectors on a wide range of substrates.
- Subjects
NANOWIRES; POLARIZATION (Electricity); AMORPHOUS substances; SILICON oxide; OPTOELECTRONIC devices
- Publication
Applied Physics A: Materials Science & Processing, 2008, Vol 91, Issue 1, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-007-4394-x