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- Title
GLANCING ANGL E REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi<sub>2</sub>0<sub>3</sub>/Si HETEROSTRUCTURE.
- Authors
SALIM, EVAN T.; AL WAZNY, MARWA S.; FAKHRY, MAKRAM A.
- Abstract
Thin films of micro bismuth oxide particles were successfully prepared by in situ oxi-dation of the laser ablated bismuth metal. (Ill) oriented p-type crystalline silicon sub-strates were used. The effects of substrate tiled angle on the characteristics of the pre-pared film were studied. Also, the performance of n-Bi203/Si heterojunction device was investigated. The obtained current-voltage characteristics in dark and under illu-mination insure the dependence of the fabricated device characteristic on the deposition angle. The I-V characteristics show that all prepared devices are of abrupt type.
- Subjects
PULSED laser deposition; BISMUTH compounds; HETEROSTRUCTURES; THIN films; CRYSTAL orientation; PERFORMANCE evaluation; MICROFABRICATION
- Publication
Modern Physics Letters B, 2013, Vol 27, Issue 16, p1
- ISSN
0217-9849
- Publication type
Article
- DOI
10.1142/S0217984913501224