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- Title
A stochastic resonator in a layered semiconductor device.
- Authors
Birhanu, Tibebe; Abebe, Yoseph; Demeyu, Lemi; Taye, Mesfin; Bekele, Mulugeta
- Abstract
In this paper, we propose a device that picks up a periodic but weak signal by amplifying it assisted by the existing background noise. The device consists of a doped layered semiconductor with three gates that generate a one-dimensional double-well potential along the semiconductor. A laser coolant is to be shined on the other side of the central gate perpendicular to the one-dimensional layer causing triple-well potential. A weak tunable oscillator imposed parallel to the layer that rocks the potential landscape can pick up an incoming signal of interest as a result of resonance. To justify the model, we carried out analytic calculation as well as Monte Carlo simulation. The two approaches agree reasonably well for all the different parameter values we used.
- Subjects
DOPED semiconductors; MONTE Carlo method; RESONATORS; SEMICONDUCTOR devices; STOCHASTIC resonance; SEMICONDUCTORS
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2021, Vol 35, Issue 28, p1
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979221502842