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- Title
A SPICE Model for GaN-Gate Injection Transistor (GIT) at Room Temperature.
- Authors
Garcia, Frances; Shamsir, Samira; Islam, Syed K.; Tolbert, Leon M.
- Abstract
In this paper, an equivalent circuit model is developed for a commercial Gallium Nitride (GaN) gate injection transistor (GIT) device at room temperature. The I-V and C-V characteristics are extracted from the commercial device datasheet and fitted in MATLAB. The fitted equations are realized as a combination of behavioral circuit components to be carried out in SPICE simulation. The equivalent circuit model is tested in a simple configuration for I-V curve simulation through varying of parameters and then in a simple boost configuration typical for power electronics applications to check for convergence and expected results.
- Subjects
GALLIUM nitride; TRANSISTORS; POWER electronics
- Publication
International Journal of High Speed Electronics & Systems, 2018, Vol 27, Issue 3/4, pN.PAG
- ISSN
0129-1564
- Publication type
Article
- DOI
10.1142/S0129156418400177