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- Title
Ultraviolet nano-photodetector based on ZnS:Cl nanoribbon/Au Schottky junctions.
- Authors
Wang, Li; Ma, Xu; Chen, Ran; Yu, Yong-Qiang; Luo, Lin-Bao
- Abstract
We report on a semiconductor nanostructures/metal Schottky junction for optoelectronic device application. The n-type ZnS nanoribbons (NRs) with an electron mobility of 64.9 cm V s and electron concentration of 5.7 × 10 cm were synthesized by using Cl as dopant via a thermal co-evaporation method. Electrical analysis reveals that the Schottky barrier diodes (SBD) based on the ZnS:Cl NRs/Au junctions exhibited typical rectifying behavior (rectification ratio >10) with Schottky barrier height of .64 eV and a small ideality factor of ~1.05 at 320 K. Interestingly, n-ZnS:Cl NR/Au nano-SBD device exhibited pronounced negative photoresponse at forward bias, but positive photoresponse at reverse bias under 365 nm UV light irradiation. Finally, the detailed reason for this phenomenon was explained by the energy band diagram.
- Subjects
SEMICONDUCTOR nanoparticles; NANOPARTICLE synthesis; SCHOTTKY barrier diodes; GOLD nanoparticle synthesis; ZINC sulfide; PHOTODETECTORS; N-type semiconductors; ENERGY bands
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 6, p4290
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-2981-8