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- Title
Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures.
- Authors
Wosinski, Tadeusz; Figielski, Tadeusz; Morawski, Andrzej; Makosa, Andrzej; Osinniy, Viktor; Wrobel, Jerzy; Sadowski, Janusz
- Abstract
Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.
- Subjects
NANOSTRUCTURED materials; NANOSTRUCTURES; SEMICONDUCTORS; NANOWIRES; FERROELECTRIC RAM; FERROMAGNETIC materials; MAGNETIC materials; ELECTRIC wire; ELECTRICAL conductors
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, p111
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9516-x