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- Title
Surface characteristics of MOCVD grown TiO<sub>2</sub> films by atomic force microscopy.
- Authors
Park, Young-Bae; Ahn, K. H.; Park, Dong-Wha
- Abstract
This article focuses on titanium dioxide film has been widely studied and used in high density microelectronic devices as the high dielectric constant material. For very-high-density dynamic random access memory (DRAM) structures, the TiO2 film must be deposited onto non-flat structures such as trenches. Chemical vapor deposition (CVD) is superior to sputtering in terms of step coverage. However, the as-deposited CVD TiO2 films have been considered too leaky for practical capacitor applications.
- Subjects
TITANIUM dioxide; MICROELECTRONICS; INFORMATION technology; DIELECTRICS; CHEMICAL vapor deposition; RANDOM access memory
- Publication
Journal of Materials Science Letters, 2003, Vol 22, Issue 19, p1325
- ISSN
0261-8028
- Publication type
Article
- DOI
10.1023/A:1025775025358