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- Title
Local magnetic order in silicon implanted with high-energy ions.
- Authors
Adashkevich, S.V.; Lapchuk, N.M.; Stel’makh, V.F.; Fedoruk, G.G.; Shumskaya, E.N.
- Abstract
A room-temperature local magnetic order has been detected in silicon implanted with high-energy Kr+ and Xe+ ions. The evidence of the presence of the local magnetic order are the electron magnetic resonance lines with g-factor values of about 2.2 and 3.4, the hysteresis of the resonance magnetic field values of these lines, the anisotropy characteristic of ferromagnets, and the broadening. The ordering effect is retained after the annealing of samples at temperatures of no higher than 1270 K.
- Subjects
SILICON; MAGNETISM; IONS; PARTICLES (Nuclear physics); FERROMAGNETISM
- Publication
JETP Letters, 2007, Vol 84, Issue 10, p547
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S0021364006220048