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- Title
Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT.
- Authors
Amarnath, Gaini; Lenka, Trupti Ranjan
- Abstract
We have developed a unified analytical model for computation of 2D electron gas sheet charge density in AlInN/GaN metal-oxide-semiconductor high electron mobility transistor device structure. This model has been developed by incorporating the variation in lowest three energy sub-bands and Fermi level energy in the quantumwell with respect to gate voltage. We noticed that the dependency of lowest sub-band energy with Fermi energy having two fields, which are the lowest sub-band energy is greater and lesser than the Fermi level energy. According to these two fields, we have developed the fermi energy and sheet charge density expressions in each field. By combining each field of the models, developed a unified 2D electron gas sheet charge density model. The Fermi level and sheet charge density are interdependent in the model development. The developed model results are compared with TCAD simulation results and obtain a good consistency between them. This model is fitted to other metal-oxidesemiconductor high electron mobility transistor devices also with modifications in related physical values.
- Subjects
TWO-dimensional electron gas; CHARGE density waves; FIELD-effect transistors; ELECTRIC conductivity; SEMICONDUCTOR devices
- Publication
International Journal of Electronics & Telecommunications, 2017, Vol 63, Issue 4, p363
- ISSN
2081-8491
- Publication type
Article
- DOI
10.1515/eletel-2017-0049