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- Title
Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump.
- Authors
MAREK, Jan; HOSPODKA, Jiri; SUBRT, Ondrej
- Abstract
This paper presents a symbolic description of the design process of the switch transistors for the cross-coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely timeconsuming process in contrast to described analytical procedure. The significant part of the pumping losses is caused by the reverse current through the switch transistors due to the continuous-time voltage change on the main capacitors. The design process is based on the analytical expression of the time response characteristics of the pump stage as an analog system with using BSIM model equations. The main benefit of the article is the analytical transistors sizing formula so that the maximum voltage gain is achieved. The diode transistor is dimensioned for the pump requirements, as the maximal pump output ripple voltage, current, etc. The characteristics of the proposed circuit have been verified by simulation in ELDO Spice. Results are valid for N-stage charge pump and also applicable for other model equations as PSP, EKV.
- Subjects
TRANSISTORS; ON-chip charge pumps; DISCRETE-time systems; ANALOG circuits; HIGH voltages
- Publication
Radioengineering, 2017, Vol 26, Issue 3, p781
- ISSN
1210-2512
- Publication type
Article
- DOI
10.13164/re.2017.0781