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- Title
Black phosphorus field-effect transistors.
- Authors
Li, Likai; Yu, Yijun; Ye, Guo Jun; Ge, Qingqin; Ou, Xuedong; Wu, Hua; Feng, Donglai; Chen, Xian Hui; Zhang, Yuanbo
- Abstract
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 105 and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼1,000 cm2 V−1 s−1 obtained for a thickness of ∼10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.
- Subjects
PHOSPHORUS; FIELD-effect transistors; ELECTRIC currents; ELECTRONIC equipment; CHARGE carrier mobility; MODULATION-doped field-effect transistors
- Publication
Nature Nanotechnology, 2014, Vol 9, Issue 5, p372
- ISSN
1748-3387
- Publication type
Article
- DOI
10.1038/nnano.2014.35