We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Experimental analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers for WCDMA applications.
- Authors
Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong
- Abstract
Comparative analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers (PAs) for WCDMA applications is represented. For validation, GaN HEMT and Si LDMOS PAs are designed and implemented with an analog predistorter, and tested for one-tone and 4-carrier WCDMA signals at 2.14 GHz. The measured results show that the GaN HEMT PA shows better predistortability and more stable temperature and frequency characteristics compared with the Si LDMOS PA. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 393–396, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23134
- Subjects
POWER amplifiers; GALLIUM nitride; METAL oxide semiconductors; CODE division multiple access; TRANSISTORS
- Publication
Microwave & Optical Technology Letters, 2008, Vol 50, Issue 2, p393
- ISSN
0895-2477
- Publication type
Article
- DOI
10.1002/mop.23134