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- Title
Electrochemical deposition of GaTe thin films for photoelectrochemical applications.
- Authors
Mai, Manfang; Liao, Bin; Liao, Yijun; Lin, Donghai; Ma, Xinzhou
- Abstract
GaTe thin films are electrochemically deposited on indium tin oxide for photoelectrochemical applications. The electrochemical deposition behavior of GaTe thin films in acidic solution of HTeO2+ with Ga3+ is studied with cyclic voltammetry combining with operando transmittance spectroscopy. Underpotential deposition of Ga on Te starts at potential of − 0.35 V. The presence of Ga3+ in the solution can strongly suppressed the formation of H2Te. XPS analysis reveals that Ga-rich GaTe is deposited over a wide potential range. The photoelectrochemical performance of the thin films as photocathodes is strongly dependent on the deposition potential. The GaTe films deposited at − 1.0 V produced the highest photocurrent of about − 0.03 mA cm−2. Meanwhile the film deposited at − 0.35 V shows improved performance during photoelectrochemical measurement, which can be ascribed to the increased GaTe content during photoelectrochemical measurements, as confirmed by XPS analysis.
- Subjects
THIN film deposition; PHOTOELECTROCHEMICAL cells; PHOTOELECTROCHEMISTRY; INDIUM tin oxide; THIN films; CYCLIC voltammetry; PHOTOCATHODES
- Publication
Journal of Applied Electrochemistry, 2023, Vol 53, Issue 12, p2411
- ISSN
0021-891X
- Publication type
Article
- DOI
10.1007/s10800-023-01935-7