Found: 174
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A 2.41 ppm/°C bandgap voltage reference with second‐order curvature compensation.
- Published in:
- International Journal of Circuit Theory & Applications, 2024, v. 52, n. 11, p. 5539, doi. 10.1002/cta.4021
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- Article
INFLUENCE OF THE SELECTION OF THE APPROXIMATING FUNCTION OF THERMOMETRIC CHARACTERISTICS ON THE MEASUREMENT RESULTS OF THERMAL RESISTANCE OF POWER MOSFETS.
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- Metrology & Measurement Systems, 2024, v. 31, n. 2, p. 307, doi. 10.24425/mms.2024.149702
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- Article
Electrothermal Averaged Model of a Half-Bridge DC–DC Converter Containing a Power Module.
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- Electronics (2079-9292), 2024, v. 13, n. 18, p. 3662, doi. 10.3390/electronics13183662
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- Article
Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope.
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- Advanced Functional Materials, 2024, v. 34, n. 32, p. 1, doi. 10.1002/adfm.202316488
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- Article
Tough Transient Ionic Junctions Printed with Ionic Microgels.
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- Advanced Functional Materials, 2023, v. 33, n. 20, p. 1, doi. 10.1002/adfm.202213677
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- Article
Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein.
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- Advanced Functional Materials, 2022, v. 32, n. 38, p. 1, doi. 10.1002/adfm.202204781
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- Article
Mixed‐Dimensional MoS<sub>2</sub>/Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202110181
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- Article
Junction Field‐Effect Transistors Based on PdSe<sub>2</sub>/MoS<sub>2</sub> Heterostructures for Photodetectors Showing High Responsivity and Detectivity.
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- Advanced Functional Materials, 2021, v. 31, n. 49, p. 1, doi. 10.1002/adfm.202106105
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- Article
Temperature-stable heat pulse driver circuit for low-voltage single supply soil moisture sensors based on junction transistors.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 208, doi. 10.1049/el.2015.3329
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- Article
Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 12, p. 863, doi. 10.1049/el.2013.3417
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- Article
Contour detection based on horizontal interactions in primary visual cortex.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 5, p. 1, doi. 10.1049/el.2013.3657
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- Article
Model of hot-carrier degradation for lateral IGBT device on SOI substrate.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 7, p. 1, doi. 10.1049/el.2012.4036
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- Article
On-chip temperature compensation for optical transmitter modules.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 3, p. 32, doi. 10.1049/el.2012.3350
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- Article
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00302-y
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- Article
Template‐Guided C8‐BTBT/MAPbBr<sub>3</sub>/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 12, p. 1, doi. 10.1002/admi.202102344
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- Article
Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing.
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- Microsystems & Nanoengineering, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41378-024-00699-0
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- Article
A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference.
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- Electronics (2079-9292), 2024, v. 13, n. 8, p. 1499, doi. 10.3390/electronics13081499
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- Article
Comparison between a Cascaded H-Bridge and a Conventional H-Bridge for a 5-kW Grid-Tied Solar Inverter.
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- Electronics (2079-9292), 2023, v. 12, n. 8, p. 1929, doi. 10.3390/electronics12081929
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- Article
3D Printed Electronic Circuits from Fusible Alloys.
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- Electronics (2079-9292), 2022, v. 11, n. 22, p. 3829, doi. 10.3390/electronics11223829
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- Article
A Single-Event Burnout Hardened Super-Junction Trench SOI LDMOS with Additional Hole Leakage Paths.
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- Electronics (2079-9292), 2022, v. 11, n. 22, p. 3764, doi. 10.3390/electronics11223764
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- Article
A New Gate Driver for Suppressing Crosstalk of SiC MOSFET.
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- Electronics (2079-9292), 2022, v. 11, n. 20, p. 3268, doi. 10.3390/electronics11203268
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- Article
Low-Noise Programmable Voltage Source.
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- Electronics (2079-9292), 2020, v. 9, n. 8, p. 1245, doi. 10.3390/electronics9081245
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- Article
Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications.
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- Electronics (2079-9292), 2020, v. 9, n. 2, p. 332, doi. 10.3390/electronics9020332
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- Article
A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization.
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- Electronics (2079-9292), 2019, v. 8, n. 11, p. 1317, doi. 10.3390/electronics8111317
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- Article
Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module.
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- Electronics (2079-9292), 2019, v. 8, n. 11, p. 1226, doi. 10.3390/electronics8111226
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- Article
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor.
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- Electronics (2079-9292), 2019, v. 8, n. 6, p. 657, doi. 10.3390/electronics8060657
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- Article
Electronic Circuit with Controllable Negative Differential Resistance and its Applications.
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- Electronics (2079-9292), 2019, v. 8, n. 4, p. 409, doi. 10.3390/electronics8040409
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- Article
Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology.
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- Optical Engineering, 2013, v. 52, n. 4, p. 1, doi. 10.1117/1.OE.52.4.044001
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- Article
Field-effect BJT: an adaptive and multifunctional nanoscale transistor.
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- Applied Nanoscience, 2022, v. 12, n. 5, p. 1435, doi. 10.1007/s13204-021-02299-0
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- Article
Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.
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- IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24
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- Article
Chaotic dynamics in memristive circuits.
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- Caderno Brasileiro de Ensino de Física, 2023, v. 45, p. 1, doi. 10.1590/1806-9126-RBEF-2023-0116
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- Article
A New Design for a BiCMOS Controlled Current Conveyor.
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- Electronics & Electrical Engineering, 2013, v. 19, n. 1, p. 56, doi. 10.5755/j01.eee.19.1.3257
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- Article
Modeling and Optimization of Directly Modulated Piezoelectric Micromachined Ultrasonic Transducers.
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- Sensors (14248220), 2021, v. 21, n. 1, p. 157, doi. 10.3390/s21010157
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- Article
Analytical Study of Front-End Circuits Coupled to Silicon Photomultipliers for Timing Performance Estimation under the Influence of Parasitic Components.
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- Sensors (14248220), 2020, v. 20, n. 16, p. 4428, doi. 10.3390/s20164428
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- Article
Low-Voltage Low-Pass and Band-Pass Elliptic Filters Based on Log-Domain Approach Suitable for Biosensors.
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- Sensors (14248220), 2019, v. 19, n. 24, p. 5581, doi. 10.3390/s19245581
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- Article
BATTLE FIELD DAMAGE REPAIR OF A HELICOPTER COMPOSITE FRAME-TO-SKIN JUNCTION.
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- Journal of Battlefield Technology, 2009, v. 12, n. 2, p. 13
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- Article
William Shockley: The Father of a Complicated Legacy.
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- Microwave Journal, 2024, v. 67, n. 2, p. 18
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- Article
Picking the Right Semiconductor Technology for Pulsed RF Power Amplifiers.
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- Microwave Journal, 2018, p. 6
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- Article
Adaptive Gate Bias Module Ensures Amplifier Performance.
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- Microwave Journal, 2016, v. 59, n. 4, p. 182
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- Article
Susceptor-based rapid thermal processing for forming ultra-shallow junctions.
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- Solid State Technology, 2000, v. 43, n. 4, p. 50
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- Article
Double-polysilicon self-aligned lateral bipolar transistors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y
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- Article
A Review of 1/f Noise in Terms of Mobility Fluctuations and White Noise in Modern Submicron Bipolar Transistors — BJTs and HBTs.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 4, p. R175, doi. 10.1142/S0219477501000457
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- Article
Semiconductor Junction Noise Revisited: Where Have all the Physical Noise Sources Gone?
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- Fluctuation & Noise Letters, 2001, v. 1, n. 3, p. C15, doi. 10.1142/S0219477501000421
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- Article
Statistical Simulations of the Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors Using a Model Based on Generation-Recombination Centers.
- Published in:
- Fluctuation & Noise Letters, 2001, v. 1, n. 2, p. L51, doi. 10.1142/S0219477501000202
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- Article
Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers.
- Published in:
- Russian Physics Journal, 2009, v. 52, n. 11, p. 1186, doi. 10.1007/s11182-010-9357-6
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- Article
An investigation of electrophysical characteristics of organic semiconductor films.
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- Russian Physics Journal, 2007, v. 50, n. 6, p. 612, doi. 10.1007/s11182-007-0089-1
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- Article
Ultra‐Low Power and Reliable Dynamic Memtransistor Based on Charge Storage Junction FET with Step‐Wise Potential Barrier for Energy‐Efficient Edge Computing Framework.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300904
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- Article
All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000883
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- Article
Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation.
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- Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000872
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- Article
InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000291
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- Article