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- Title
Structural and Ferroelectric Characterization of PZT Thin Films.
- Authors
Yang, Ying; Chen, Zhiming; Zhao, Gaoyang; Zhang, Weihua
- Abstract
Pb(Zr[sub x]Ti[sub l-x])O[sub 3] (PZT) films were prepared on the ITO coated glass plates in sol-gel dip-coating process and post-annealing at different temperatures. The structural properties of the films were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is shown that the PZT ferroelectric thin films with (110) preferential orientation and well-crystallized perovskite structure can be obtained after annealing at 680°C for 30 minutes. The P-E hysteresis loops were measured by the Sawyer-Tower test system with a compensation resistor at room temperature. Values of the remanent polarization (P[sub r]) and the coercive electric field (E[sub c]) are 19.36 · C/cm² and 95 kV/cm, respectively, for the prepared PZT thin films. The relative dielectric constant ε [sup r] and the dissipation factor tg· of the PZT thin films are equal to 639 and 0.23, respectively, which were measured in a LCR meter.
- Subjects
THIN films; FERROELECTRICITY
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, Vol 16, Issue 28/29, p4460
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979202015613