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- Title
Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors.
- Authors
Anczarski, Jadyn; Dubovskov, Makar; Fink, Caleb W.; Kevane, Sukie; Kurinsky, Noah; Mazumdar, Aparajita; Meijer, Samuel J.; Phipps, Arran; Ronning, Filip; Rydstrom, Ivar; Simchony, Aviv; Smith, Zoë; Thomas, Sean; Watkins, Samuel L.; Young, Betty
- Abstract
To search for dark matter candidates with masses below O (MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1–100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the single-electron level. A low-capacitance (∼ 1.6 pF) HEMT is used as a buffer stage at T = 10 mK to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance (∼ 200 pF) HEMT amplifier stage at T = 4 K. Importantly, the design of this amplifier makes it usable with any insulating material—allowing for rapid prototyping of a variety of novel detector materials. We present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons.
- Subjects
DETECTORS; MODULATION-doped field-effect transistors; CRYOGENICS; DARK matter; INSULATING materials; RAPID prototyping; ELECTRONIC circuits
- Publication
Journal of Low Temperature Physics, 2024, Vol 214, Issue 3/4, p256
- ISSN
0022-2291
- Publication type
Article
- DOI
10.1007/s10909-023-03046-1